Investigation of the Process of Microwave Plasma Ashing of Photoresist Films from Semiconductor Wafers Using the Method of Optical Emission Spectroscopy

Authors

  • S.V. Bordusau
  • S. I. Madveika
  • M. S. Lushakova

Keywords:

plasma, microwave discharge, photoresist, films, ashing

Abstract

The results of the analysis of photoresist protection coating removal dynamics in oxygen microwave plasma as well as the character of light emission intensity change of spectral line O1 (λ=844,6 nm), used to control the removal of photoresist in case of processing a big number of silicon wafers, are presented. The obtained results enable supplementing phenomenological model of plasmachemical destruction of photoresist films in the volume of oxygen microwave plasma.

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Published

2015-04-05

Issue

Section

Articles