High Rate Removal of Photoresist Films in the Microwave Discharge Afterglow in Oxygen

Authors

  • S.V. Bordusau
  • S. I. Madveika

Keywords:

oxygen microwave discharge, photoresist removal

Abstract

The results of experimental investigation of the process of removing photoresistive protection layers in oxygen microwave discharge afterglow are presented. The process demonstrated good characteristics and may be successfully used in very-large-scale integration circuits (VLSI) processing in automated manu-facture conditions.

References

Bordusov S, Microwave plasma technologies in the production of electronic devices, Minsk:Bestprint, 2002.

Dostanko A, [et al.], Plasma Process in Electronics Production, In 3 Vol, Vol. 1, Minsk: FUAinform, 2000.

Einspruch N, Brown D, Plasma Processing for VLSI, Academic Press, Inc. 1984.

Bordusau S V, Madveika S I, Dostanko A P, Specific characteristics of «loading effect» at microwave plasma chemical processing of silicon wafers, proc of the XXth Int. Symp. Physics of Switching Arc, Brno, Czech Republic, September 2 - 6, 2013, Brno University of Technology – Brno, 2013, P. 96-99

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Published

2014-08-10

Issue

Vol. 1 No. 3 (2014)

Section

Articles

License

Copyright (c) 2014 S.V. Bordusau , S. I. Madveika

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