Comparison of Si and SiC based Power Converter Module of 150 kVA for Power System Applications

Authors

  • Jan Štěpánek University of West Bohemia Plzeň
  • Luboš Streit University of West Bohemia Plzeň
  • Tomáš Komrska University of West Bohemia Plzeň

DOI:

https://doi.org/10.14311/TEE.2018.1.010

Abstract

The paper deals with the comparison of power semiconductors based on Si and SiC in application of power converters for power systems. These are single-phase voltage-source bridge inverters with nominal power of 150 kVA. Power converters are designed to operate under both active power and reactive power. Mechanical design of the converters is ready for interchange the power semiconductor modules and assess the operation with both, Si and SiC technology.

Author Biographies

Jan Štěpánek, University of West Bohemia Plzeň

RICE

Luboš Streit, University of West Bohemia Plzeň

RICE

Tomáš Komrska, University of West Bohemia Plzeň

RICE

References

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E. Behrouzian, M. Bongiorno and R. Teodorescu, “Impact of Switching Harmonics on Capacitor Cells Balancing in Phase-Shifted PWM-Based Cascaded H-Bridge STATCOM,” IEEE Transactions on Power Electronics, vol. 32, no. 1, pp. 815-824, Jan. 2017. https://doi.org/10.1109/TPEL.2016.2535481

Toman, P. a kol., Provoz distribučních soustav, České vysoké učení technické v Praze, Praha 2011.

Z. Duan, T. Fan, X. Wen and D. Zhang, “Improved SiC Power MOSFET Model Considering Nonlinear Junction Capacitances,” IEEE Transactions on Power Electronics, vol. 33, no. 3, pp. 2509-2517, March 2018. https://doi.org/10.1109/TPEL.2017.2692274

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Published

2020-03-30

Issue

Section

Articles