Impedance Spectroscopy of Al/a-SiC/c-Si(n)/Al Solar Heterojunction Structure
Abstract
Amorphous silicon carbide a-SiC is compoundwith tetrahedrally coordinated structure. It may be used in
various branches of electrotechnical production. The
influence of elevated temperature treatment on the
properties of prepared Al/a-SiC/c-Si(n)/Al heterojunction
structure was studied by complex impedance spectroscopy
in the dark. AC equivalent circuit was obtained by fitting of
biased impedance dependences and the electronic
components were used to describe the electronic transport
properties of prepared structures and clarification of the
impact of elevated temperature treatment.
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