Differences Between Doped and Undoped Zirconium Alloy Oxide Layers

H. Frank

Abstract


2 eV and the temperature dependence of resistivity, electron mobility and carrier concentration, and also the behavior of injection and extraction currents, were found to be equal inside the error limits, thus proving the doping to be ineffective. Zirconium oxide fits into the group of oxide semiconductors, being an n-type reduction semiconductor, conduction depending on stoichiometric deviation, i.e. missing oxygen.

Keywords


Zirconium alloy oxide layers; doped and undoped samples; I-V characteristics; temperature dependence of transport parameters

Full Text: PDF

Refbacks

  • There are currently no refbacks.


Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.

ISSN 1210-2709 (Print)
ISSN 1805-2363 (Online)
Published by the Czech Technical University in Prague