Gated Graphene Electrical Transport Characterization

Josef Náhlík, Michal Janoušek, Zbyněk Šobáň

Abstract


Graphene is a very interesting new material, and promises attractive applications in future nanodevices. It is a 2D carbon structure with very interesting physical behavior. Graphene is an almost transparent material that has higher carrier mobility than any other material at room temperature. Graphene can therefore be used in applications such as ultrahigh-speed transistors and transparent electrodes. In this paper, we present our preliminary experiments on the transport behavior of graphene at room temperature. We measured the resistivity of Hall-bar samples depending on gate voltage (backgated graphene). Hysteresis between the forward and backward sweep direction was observed.

Keywords


Graphene; Hysteresis in electric transport.

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ISSN 1210-2709 (Print)
ISSN 1805-2363 (Online)
Published by the Czech Technical University in Prague