Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering

Authors

  • Dmitriy A. Golosov
  • Sergey M. Zavatskiy
  • Sergey N. Melnikov

DOI:

https://doi.org/10.14311/1743

Keywords:

yttria-stabilized zirconia, RF sputtering, X-ray diffraction, dielectric constant, loss tangent, capacity-voltage characteristic, ionic conductivity.

Abstract

This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10-2 S/cm under 800 °C.

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Author Biographies

Dmitriy A. Golosov

Sergey M. Zavatskiy

Sergey N. Melnikov

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Published

2013-01-02

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Section

Articles