Physical and Electrical Properties of Yttria-Stabilized Zirconia Thin Films Prepared by Radio Frequency Magnetron Sputtering
Keywords:yttria-stabilized zirconia, RF sputtering, X-ray diffraction, dielectric constant, loss tangent, capacity-voltage characteristic, ionic conductivity.
This paper presents the electrophysical characteristics of a 7 mol.% yttria-stabilized zirconia (YSZ) thin film deposited by radio-frequency magnetron sputtering. In order to form the crystallinestructure, the deposited films were annealed in air over a temperature range of 700 ÷ 900 °C. By XRD analysis it was established that as the deposited films were amorphous, they crystallized into a pure cubic structure as a result of annealing in air at a temperature above 820 °C.The electrophysical properties of YSZ films were investigated on structures such¨as Ni/YSZ/Pt/Ti/Si and Ni/YSZ/Si. Film features ? > 20 and tg ? < 0.05 were obtained. An estimate of the capacity-voltage characteristic proved that the Ni/YSZ/Si structures possessed a hysteresis. This hysteresis resulted from the drift of the mobile ions in the YSZ film. High-temperature ionic conductivity of the stabilized zirconia was determined by the measurements of the electric resistivity of the YSZ films at 1 kHz over the temperature range from ambient to 800 °C. The YSZ film conductivity obtained was 1.96 × 10-2 S/cm under 800 °C.
Copyright (c) 2015 Acta Polytechnica
This work is licensed under a Creative Commons Attribution 4.0 International License.
Authors who publish with this journal agree to the following terms:
1. Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
2. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal.
3. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).