Advanced Design of Lifetime Control for High-power Devices in TCAD Environment

Authors

  • J. Vobecký
  • P. Hazdra
  • N. Galster

Abstract

At present, advanced design of high-power devices relies on standard TCAD tools. In spite of their maturity, there are many specific areas these tools do not cover satisfactorily and special approach to device design has to be chosen. One of these areas, namely the device parameter optimization via lifetime engineering, is presented. Optimization of both the static and dynamic parameters of the free-wheeling diode supporting operation of the 4.5 kV Gate Turn-Off thyristor is used as an example.

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Author Biographies

J. Vobecký

P. Hazdra

N. Galster

Published

2000-01-03

How to Cite

Vobecký, J., Hazdra, P., & Galster, N. (2000). Advanced Design of Lifetime Control for High-power Devices in TCAD Environment. Acta Polytechnica, 40(3). Retrieved from https://ojs.cvut.cz/ojs/index.php/ap/article/view/86

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Section

Articles